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data sheet 1 2004-05-03 0 1 2 3 4 35 37 39 41 43 45 output power (dbm) evm rms (average %) .. 0 10 20 30 40 efficiency (%) edge evm performance evm & efficiency vs. power output v dd = 28 v, i dq = 0.8 a, f = 1989.8 mhz evm efficiency PTF180601c package 21248 ldmos field effect transistor 60 w, dcs/pcs band 1805?1880 mhz, 1930?1990 mhz description the PTF180601 is a 60 w, internally matched goldmos fet intended for edge applications in the dcs/pcs band. full gold metallization ensures excellent device lifetime and reliability. features ? broadband internal matching ? typical two-tone performance - average output power = 30 w - gain = 16.5 db - efficiency = 35% ? typical cw performance - output power at p?1db = 75 w - gain = 15.5 db - efficiency = 47% ? integrated esd protection : human body model, class 1 (minimum) ? excellent thermal stability ? low hci drift ? capable of handling 10:1 vswr @ 28 v, 60 w (cw) output power PTF180601 rf characteristics at t case = 25c unless otherwise indicated edge measurements ( not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 800 ma, p out = 22 w, f = 1989.8 mhz characteristic symbol min typ max units error vector magnitude evm (rms) ? 1.7 ? % modulation spectrum @ 400 khz acpr ? ?60 ? dbc modulation spectrum @ 600 khz acpr ? ?73 ? dbc gain g ps ? 16.5 ? db drain efficiency h d ? 32 ? % two?tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 800 ma, p out = 60 w pep, f = 1930 mhz, tone spacing = 1 mhz characteristic symbol min typ max units gain g ps 15 16.5 ? db drain efficiency h d 30 35 ? % intermodulation distortion imd ? ?30 ?28 dbc esd: electrostatic discharge sensitive device ? observe handling precautions! PTF180601e package 30248
data sheet 2 2004-05-03 PTF180601 electrical characteristics at t case = 25c unless otherwise indicated characteristic conditions symbol min typ max units drain?source breakdown voltage v gs = 0 v, i ds = 10 a v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a on?state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.135 ? w operating gate voltage v ds = 28 v, i dq = 800 ma v gs 2.5 3.2 4.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? 0.01 1.0 a maximum ratings parameter symbol value unit drain?source voltage v dss 65 v gate?source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation PTF180601c p d 159 w above 25c derate by 0.91 w/c total device dissipation PTF180601e p d 180 w above 25c derate by 1.03 w/c storage temperature range t stg ?40 to +150 c thermal resistance PTF180601c r q jc 1.1 c/w (t case = 70c, 60 w cw) PTF180601e 0.97 c/w
data sheet 3 2004-05-03 PTF180601 typical performance (measurements taken in production test fixture, at t case = 25c unless otherwise indicated) -80 -75 -70 -65 -60 -55 35 37 39 41 43 45 output power (dbm) modulation spectrum (db) 0 10 20 30 40 50 efficiency (%) edge modulation spectrum performance mod spectrum vs. power output v dd = 28 v, i dq = 0.8 a, f = 1989.8 mhz efficiency 400 khz 600 khz 0 1 2 3 4 5 35 37 39 41 43 45 output power (dbm) evm rms (average %) .. 0 10 20 30 40 50 efficiency (%) edge evm performance at 26 v v dd = 26 v, i dq = 0.8 a, f = 1989.8 mhz evm efficiency gain & efficiency vs. output power v dd = 28 v, i dq = 0.8 a, f = 1990 mhz 11 12 13 14 15 16 17 18 30 35 40 45 50 output power (dbm) gain (db) 0 10 20 30 40 50 60 70 efficiency (%) efficiency gain 1 2 3 4 5 6 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 quiscent drain current (a) evm rms (average %) . -110 -100 -90 -80 -70 -60 -50 -40 modulation spectrum (db) evm & modulation spectrum performance f = 1989.8 mhz, output power = 22 w evm 400 khz 600 khz
data sheet 4 2004-05-03 PTF180601 typical performance (cont.) output power, gain & efficiency (at p-1db) vs. frequency v dd = 28 v, i dq = 0.8 a 15 16 17 18 19 1900 1920 1940 1960 1980 2000 2020 frequency (mhz) gain (db) 35 40 45 50 55 output power (dbm), efficiency (%) gain efficiency output power power gain vs. output power v dd = 28 v, f = 1990 mhz 15 16 17 18 0 1 10 100 output power (w) power gain (db) i dq = 600 ma i dq = 800 ma i dq = 1.0 a broadband test fixture performance v dd = 28 v, i dq = 0.8 a, p out = 60 w -20 -15 -10 -5 0 5 10 15 20 1900 1930 1960 1990 2020 frequency (mhz) gain (db), return loss (db) 30 40 50 60 70 gain return loss efficiency efficiency (%) broadband test fixture performance v dd = 28 v, i dq = 0.8 a, p out = 10 w -20 -15 -10 -5 0 5 10 15 20 1900 1930 1960 1990 2020 frequency (mhz) gain (db), return loss (db) 6 9 12 15 18 21 24 27 30 gain return loss efficiency efficiency (%)
data sheet 5 2004-05-03 PTF180601 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage 0.40 1.53 2.67 3.80 4.93 6.07 gate-source voltage vs. case temperature voltage normalized to typical gate voltage. typical performance (cont.) 44 45 46 47 48 49 50 22 24 26 28 30 32 supply voltage (v) output power (dbm) output power vs. supply voltage i dq = 0.8 a, f = 1990 mhz -80 -70 -60 -50 -40 -30 -20 32 34 36 38 40 42 44 46 48 output power, pep (dbm) imd (dbc) intermodulation distortion vs. output power v dd = 28 v, i dq = 0.8 a, f 1 = 1990 mhz, f 2 = 1991 mhz 3rd order 7th order 5th order series show current.
data sheet 6 2004-05-03 PTF180601 reference circuit reference circuit schematic for 1990 mhz frequency z source w z load w mhz r jx r jx 1900 9.9 0.55 3.7 4.1 1920 10.3 0.56 3.6 4.3 1930 10.3 0.50 3.5 4.3 1960 10.7 0.23 3.2 4.5 1990 11.0 ?0.15 3.0 4.7 2000 11.1 ?0.30 2.9 4.8 2020 11.3 ?0.58 2.7 5.0 broadband circuit impedance data 0.1 0.3 0.2 0 . 1 0 . 2 0 . 1 s t o w a r d g e n e r a t o r - - - > e n g t h s t o w a r d l o a d - 0 . 0 1900 mhz 2020 mhz z load z source 2020 mhz 1900 mhz z source z load g s d z 0 = 50 w l1 2.7h rf_in c4 1.1pf l 1 l 2 10pf c5 l 3 c1 + 10f v gg c3 r2 c2 v 0.1f 220 l 4 10pf v 220 r1 d.u.t. l 5 l 7 l 8 10pf c9 1.3pf c11 l 9 l 10 0.4pf c10 rf_out v dd l 6 c6 10pf l2 c7 10f + c8 0.1f
data sheet 7 2004-05-03 PTF180601 180601_01 c4 c5 c9 c2 c1 r2 l2 c3 c6 c11 c10 c8 c7 + v dd g nd v gg input output + rf_out rf_in r3 l3 r1 circuit assembly information dut PTF180601 ldmos transistor pcb 1.27 mm [0.050"] thick, e r = 6.0 tmm6 2 oz. copper, both sides microstrip electrical characteristics at 1990 mhz dimensions: l x w (mm.) dimensions: l x w (in.) l 1 0.140 l, 50 w 10.16 x 1.88 0.400 x 0.074 l 2 0.068 l, 50 w 4.95 x 1.88 0.195 x 0.074 l 3 0.112 l, 9.24 w 7.14 x 18.31 0.281 x 0.721 l 4 0.064 l, 78 w 4.83 x 0.76 0.190 x 0.030 l 5 0.127 l, 6.64 w 8.13 x 26.42 0.320 x 1.040 l 6 0.206 l, 65 w 15.24 x 1.14 0.600 x 0.045 l 7 0.035 l, 9 w 2.54 x 18.16 0.100 x 0.715 l 8 0.077 l, 21.87 w 5.26 x 6.53 0.207 x 0.257 l 9 0.075 l, 50 w 5.46 x 1.88 0.215 x 0.074 l 10 0.023 l, 50 w 1.65 x 1.88 0.065 x 0.074 reference circuit 1 (not to scale) reference circuit (cont.) 1 gerber files for this circuit are available on request.
data sheet 8 2004-05-03 PTF180601 reference circuit (cont.) component description manufacturer p/n or comment c1, c7 capacitor, 10 f, 35 v, smd digi-key pcs6106tr-nd tantalum te series c2, c8 capacitor, 0.1 f, 50 v digi-key pcc103bct-nd c3, c5, c6, c9 capacitor, 10 pf atc 100b 100 c4 capacitor, 1.1 pf atc 100b 1r1 c10 capacitor, 0.4 pf atc 100b 0r4 c11 capacitor, 1.3 pf atc 100b 1r3 l1 chip inductor, 2.7 h digi-key pcd1287ct-nd l2 ferrite, 6 mm philips 53/3/4.6-452 r1, r2 resistor, 220 w digi-key p220ect r3 resistor, 1.0 w digi-key 1.0 pct
data sheet 9 2004-05-03 PTF180601 package outline specifications type package outline package description marking PTF180601c 21248 earless ceramic PTF180601c PTF180601e 30248 thermally enhanced, flange mount PTF180601e notes: unless otherwise specified 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. pins: d = drain, s = source, g = gate 4. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001] package 21248 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products 0.025 [.001] 2x 12.70 [.500] 19.430.51 [.765.020] 19.810.20 [.780.008] sph 1.58 [.062] 9.78 [.385] s g d ( 45 x 2.72 [.107]) 20.57 [.810] -a- 3.610.38 [.142.015] 1.02 [.040] 0.51 [.020] 4.830.51 [.190.020] pkg_248_1 c l c l [.370 ] +.004 -.006 lid 9.40 +0.10 -0.15
data sheet 10 2004-05-03 PTF180601 package outline specifications (cont.) package 30248 notes: unless otherwise specified 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. pins: d = drain, s = source, g = gate 4. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products 34.04 [1.340] 19.810.20 [.780.008] 1.02 [.040] 19.43 0.51 [.765.020] (45 x 2.72 [.107]) 2x 12.70 [.500] 2x 4.830.51 [.190.020] 27.94 [1.100] 4x r1.52 [.060] 2x r1.63 [.064] d g s 9.78 [.385] 0.0381 [.0015] -a- 0.51 [.020] pkg_248_0 c l c l lid 9.40 +0.10 -0.15 3.760.38 [.142.015] sph 1.57 [.062] [.370 ] +.004 -.006
data sheet 11 2004-05-03 goldmos ? is a registered trademark of infineon technologies ag. edition 2004-05-03 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2003. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-goldmos) usa or +1 408 776 0600 international PTF180601 confidential, limited internal revision history: 2004-05-03 previous version: 2003-12-22, data sheet page subjects (major changes since last revision) PTF180601e added.

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